Point defects have been created in GaN by various types of irradiation: electrons (1 and 2.5 MeV, and the spectrum from 90 Sr); protons (0.15 MeV, 2 MeV, and 24 GeV); He ions (5.4 MeV); g-rays ( 60 Co); and sputtering and e-beam deposition of metals. They have been studied by temperaturedependent Ha
Evidence for Two Mg Related Acceptors in GaN
β Scribed by Monemar, B.; Paskov, P. P.; Pozina, G.; Hemmingsson, C.; Bergman, J. P.; Kawashima, T.; Amano, H.; Akasaki, I.; Paskova, T.; Figge, S.; Hommel, D.; Usui, A.
- Book ID
- 121364703
- Publisher
- The American Physical Society
- Year
- 2009
- Tongue
- English
- Weight
- 675 KB
- Volume
- 102
- Category
- Article
- ISSN
- 0031-9007
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