✦ LIBER ✦

Evidence for inclusions in rhodium doped molecular beam epitaxy grown GaAs layers

✍ Scribed by B. Guenais; A. Guivarc'h; R. Chaplain; A. Poudoulec; G. Guillot

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

Low-frequency noise in GaAs layers grown

✍ Munecazu Tacano; Yoshinobu Sugiyama; Takashi Taguchi; Hajime Soga 📂 Article 📅 1988 🏛 Elsevier Science 🌐 English ⚖ 450 KB

Origin of oval defects in GaAs layers gr

✍ K. Akimoto; M. Dohsen; M. Arai; N. Watanabe 📂 Article 📅 1985 🏛 Elsevier Science 🌐 English ⚖ 621 KB

Electronic properties of multiple Si δ-d

✍ S.M. Shibili; A.B. Henriques; C.A.C. Mendonça; E.C.F. da Silva; E.A. Meneses; L. 📂 Article 📅 1993 🏛 Elsevier Science 🌐 English ⚖ 241 KB

4077. Tin-doping effects in GaAs films g

📂 Article 📅 1979 🏛 Elsevier Science 🌐 English ⚖ 173 KB

The effect of As/Ga flux ratio on Si-dop

✍ D.H. Zhang; K. Radhakrishnan; S.F. Yoon 📂 Article 📅 1994 🏛 Elsevier Science 🌐 English ⚖ 476 KB

Lateral uniformity in Sn- or Si-doped n-

✍ S. Hiyamizu; T. Fujii; K. Nanbu; H. Hashimoto 📂 Article 📅 1981 🏛 Elsevier Science 🌐 English ⚖ 288 KB