𝔖 Bobbio Scriptorium
✦   LIBER   ✦

Evaluation of surface roughness of ULE® substrates machined by Ar+ ion beam

✍ Scribed by Yuichi Kurashima; Shuhei Miyachi; Iwao Miyamoto; Manabu Ando; Atsushi Numata

Publisher
Elsevier Science
Year
2008
Tongue
English
Weight
206 KB
Volume
85
Category
Article
ISSN
0167-9317

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

Surface structure and apatite-forming ab
Surface structure and apatite-forming ability of polyethylene substrates irradiated by oxygen cluster ion beams
✍ M. Kawashita; S. Itoh; R. Araki; K. Miyamoto; G. H. Takaoka 📂 Article 📅 2007 🏛 John Wiley and Sons 🌐 English ⚖ 653 KB

## Abstract Polyethylene (PE) substrates were irradiated at a dose of 1 × 10^15^ ions/cm^2^ by the simultaneous use of oxygen (O~2~) cluster and monomer ion beams. The acceleration voltage for the ion beams was varied from 3 to 9 kV. Unirradiated and irradiated PE substrates were soaked for 7 days

Growth of n-GaAs layer on a rough surfac
Growth of n-GaAs layer on a rough surface of p-Si substrate by molecular beam epitaxy (MBE) for photovoltaic applications
✍ B. Azeza; L. Sfaxi; R. M'ghaieth; A. Fouzri; H. Maaref 📂 Article 📅 2011 🏛 Elsevier Science 🌐 English ⚖ 749 KB

The n-GaAs layer was successfully grown on (1 0 0) p-type silicon (p-Si) substrate by molecular beam epitaxy (MBE) using rough surface buffer layer (RSi) to reduce the tensile stress in GaAs layer grown on Si substrate. We have reviewed the initial stage and the recombination of GaAs epitaxial layer