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Evaluation of Si3N4/Si interface by UV Raman spectroscopy

โœ Scribed by A. Ogura; T. Yoshida; D. Kosemura; Y. Kakemura; T. Aratani; M. Higuchi; S. Sugawa; A. Teramoto; T. Ohmi; T. Hattori

Publisher
Elsevier Science
Year
2008
Tongue
English
Weight
216 KB
Volume
254
Category
Article
ISSN
0169-4332

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The a-Si N, ,:Hic-Si interface density of states is studied by the photocapacitance transient spectroscopy (PCTS) technique. After illumination with 4.13 eV photons, the PCTS reveals an interface defect creation while the midgap voltage shift indicates a hole injection from c-Si and subsequent hole