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Evaluation of local strain in Si using UV-Raman spectroscopy

โœ Scribed by Atsushi Ogura; Daisuke Kosemura; Munehisa Takei; Hidetsugu Uchida; Nobuyoshi Hattori; Masaki Yoshimaru; Satoru Mayuzumi; Hitoshi Wakabayashi

Book ID
108215609
Publisher
Elsevier Science
Year
2009
Tongue
English
Weight
821 KB
Volume
159-160
Category
Article
ISSN
0921-5107

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Relaxation of strain in patterned strain
Relaxation of strain in patterned strained silicon investigated by UV Raman spectroscopy
โœ C. Himcinschi; I. Radu; R. Singh; W. Erfurth; A.P. Milenin; M. Reiche; S.H. Chri ๐Ÿ“‚ Article ๐Ÿ“… 2006 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 609 KB

Tensile strained Si (sSi) layers were epitaxially deposited onto fully relaxed Si 0.78 Ge 0.22 (SiGe) epitaxial layers (4 m) on silicon substrates. Periodic arrays of 150 nm ร— 150 nm and 150 nm ร— 750 nm pillars with a height of 100 nm were fabricated into the sSi and SiGe layers by electronbeam lith