Evaluation of Stress and Crystal Quality in Si During Shallow Trench Isolation by UV-Raman Spectroscopy

✍ Scribed by Daisuke Kosemura; Maki Hattori; Tetsuya Yoshida; Toshikazu Mizukoshi; Atsushi Ogura

• Book ID: 107455836
• Publisher: Springer US
• Year: 2010
• Tongue: English
• Weight: 526 KB
• Volume: 39
• Category: Article
• ISSN: 0361-5235
• DOI: 10.1007/s11664-010-1148-x