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Monitoring of stress reduction in shallow trench isolation CMOS structures via synchrotron X-ray topography, electrical data and raman spectroscopy

✍ Scribed by P. J. Mcnally; J. W. Curley; M. Bolt; A. Reader; T. Tuomi; R. Rantama¨ki; A. N. Danilewsky; I. DeWolf


Book ID
110271896
Publisher
Springer US
Year
1999
Tongue
English
Weight
257 KB
Volume
10
Category
Article
ISSN
0957-4522

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