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Evaluation of advanced chemical mechanical planarization techniques for copper damascene interconnect

✍ Scribed by K.W. Chen; Y.L. Wang; C.P. Liu; Kevin Yang; L. Chang; K.Y. Lo; C.W. Liu

Book ID
113936411
Publisher
Elsevier Science
Year
2004
Tongue
English
Weight
153 KB
Volume
447-448
Category
Article
ISSN
0040-6090

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A systematic study of Cu chemical-mechanical polishing (CMP) in terms of process parameters influence, planarization ability of the process and pattern sensitivity of the polish rate was performed. We examined the effects of Cu dishing and SiO z thinning and the reasons for them. Both were found to