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Etch pit density variation and electrical properties of GaSb single crystals grown by the Bridgman method

✍ Scribed by Roy, U.N.; Basu, S.

Book ID
122818925
Publisher
Elsevier Science
Year
1988
Tongue
English
Weight
311 KB
Volume
6
Category
Article
ISSN
0167-577X

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Sr 3 Ga 2 Ge 4 O 14 (SGG) has been grown by the vertical Bridgman method. The dielectric constants Ξ΅ T 11 and Ξ΅ T 33 at room temperature is 13.61 and 18.18, respectively. The dielectric measurements show that SGG crystals display relative high temperature stability and high frequency stability. Ther