✦ LIBER ✦

Equivalent doping profile transformation: a new analytical method to predict breakdown voltage of the composite pn junction

✍ Scribed by He, Jin; Li, Yingxue; Zhang, Xing; Wang, Yangyuan

Book ID: 126701020
Publisher: Taylor and Francis Group
Year: 2001
Tongue: English
Weight: 213 KB
Volume: 88
Category: Article
ISSN: 0020-7217
DOI: 10.1080/00207210110081133

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

Equivalent doping profile transformation

Equivalent doping profile transformation: a semi-empirical, analytical method for predicting breakdown characteristics of an approximate single-diffused parallel-plane junction

✍ Jin He; Xing Zhang; Yangyuan Wang 📂 Article 📅 2001 🏛 IEEE 🌐 English ⚖ 108 KB

EBIC profiling of bevelled samples: A pr

EBIC profiling of bevelled samples: A precise method to determine the position of p-n junctions and doping gradients

✍ Hans Wolfgang Marten; Olaf Hildebrand 📂 Article 📅 1985 🏛 Elsevier Science ⚖ 303 KB

## EBIC profiling of bevelled p-n structures is a powerful method to determine the actual positions of p-n junctions and steep doping gradients with a precision up to +lOOnm for slightly graded junctions (a = i019cm -4) and +20nm for one-sided abrupt junctions. Moreover, this method is capable ~o

Revisiting the analytic theory of p-n ju

Revisiting the analytic theory of p-n junction impedance: improvements guided by computer simulation leading to a new equivalent circuit

✍ Laux, S.E.; Hess, K. 📂 Article 📅 1999 🏛 IEEE 🌐 English ⚖ 796 KB

Equivalent doping profile transformation: a new analytical method to predict breakdown voltage of the composite pn junction

Equivalent doping profile transformation: a new analytical method to predict breakdown voltage of the composite pn junction