EBIC profiling of bevelled samples: A precise method to determine the position of p-n junctions and doping gradients
✍ Scribed by Hans Wolfgang Marten; Olaf Hildebrand
- Publisher
- Elsevier Science
- Year
- 1985
- Weight
- 303 KB
- Volume
- 129
- Category
- Article
- ISSN
- 0378-4363
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✦ Synopsis
EBIC profiling
of bevelled p-n structures is a powerful method to determine the actual positions of p-n junctions and steep doping gradients with a precision up to +lOOnm for slightly graded junctions (a = i019cm -4) and +20nm for one-sided abrupt junctions. Moreover, this method is capable ~o reveal the ~pendence of EBIC on reverse bias and beam current for each junction of p -p-n structures separately and the following effects which were previously predicted could be confirmed: electric field quenching at the p-n junction due to high beam currents, and a p -p-n space charge layer expansion with increasing reverse bias which is governed by p-n junction.