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Equilibrium step dynamics on vicinal surfaces

✍ Scribed by A. Pimpinelli; J. Villain; D.E. Wolf; J.J. Métois; J.C. Heyraud; I. Elkinani; G. Uimin


Publisher
Elsevier Science
Year
1993
Weight
81 KB
Volume
295
Category
Article
ISSN
0167-2584

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Hole transport in SiGe channels on step-
✍ R. Neumann; K. Brunner; G. Abstreiter 📂 Article 📅 2002 🏛 Elsevier Science 🌐 English ⚖ 141 KB

Hole transport in narrow modulation doped Si1-xGex channels grown on vicinal Si(1 1 3) by molecular beam epitaxy is studied. Owing to the strong step-bunching properties of the Si(1 1 3) surface, the Si1-xGex channels exhibit regular terraces with a width of typical 250 nm and a mean step height of