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Multiatomic step formation on GaAs(001) vicinal surfaces during thermal treatment

✍ Scribed by K. Ohkuri; J. Ishizaki; S. Hara; T. Fukui

Publisher
Elsevier Science
Year
1996
Tongue
English
Weight
569 KB
Volume
160
Category
Article
ISSN
0022-0248

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πŸ“œ SIMILAR VOLUMES

Theoretical and experimental investigati
Theoretical and experimental investigation of an electron interference device using multiatomic steps on vicinal GaAs surfaces
✍ J. Motohisa; M. Akabori; S. Hara; J. Ishizaki; K. Ohkuri; T. Fukui πŸ“‚ Article πŸ“… 1996 πŸ› Elsevier Science 🌐 English βš– 252 KB

We propose a new, lateral surface superlattice (LSSL) type of electron interference devices, where the period of LSSL is typically 60 nm, by utilizing multiatomic steps on a vicinal GaAs (0 0 1) surface. Conductivity of the device is theoretically studied by taking the effect of randomness in the LS