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Step structure and surface reconstruction on vicinal Ge(111) surfaces

โœ Scribed by TimothyM. Jung; R.J. Phaneuf; EllenD. Williams


Publisher
Elsevier Science
Year
1991
Weight
75 KB
Volume
254
Category
Article
ISSN
0167-2584

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Step relaxation and surface stress at H-
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Atomic relaxations at a newly discovered step structure on H-terminated Si( 111) surfaces, miscut in the ( il2) direction and prepared by a new wet chemical technique, are quantified by first-principles calculations and infrared absorption measuremeats. A strong H-H steric interaction within this s