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EPR and theoretical studies of positively charged carbon vacancy in 4H-SiC

✍ Scribed by Umeda, T.; Isoya, J.; Morishita, N.; Ohshima, T.; Kamiya, T.; Gali, A.; Deák, P.; Son, N.; Janzén, E.

Book ID
120464896
Publisher
The American Physical Society
Year
2004
Tongue
English
Weight
465 KB
Volume
70
Category
Article
ISSN
1098-0121

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## Abstract The magnetic properties of conduction electrons (CE) in heavily doped n‐type 4H SiC have been studied with electron paramagnetic resonance (EPR) in the temperature interval from 7 to 140 K. An EPR line with “Dyson lineshape” was observed in 4H SiC wafers with (__N__~D~–__N__~A~) ≈ 10^19