A study of vacancies and vacancy pair defects in 4H SiC grown by halide chemical vapor deposition

✍ Scribed by M. E. Zvanut; G. Ngetich; H. J. Chung; A. Y. Polyakov; M. Skowronski

• Publisher: Springer US
• Year: 2007
• Tongue: English
• Weight: 188 KB
• Volume: 19
• Category: Article
• ISSN: 0957-4522
• DOI: 10.1007/s10854-007-9378-2