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Epitaxy of silicon doped gallium arsenide by molecular beam method

✍ Scribed by Cho, A. Y. ;Hayashi, I.

Book ID: 112818441
Publisher: Springer-Verlag
Year: 1971
Weight: 321 KB
Volume: 2
Category: Article
ISSN: 0026-086X
DOI: 10.1007/bf02662735

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