✦ LIBER ✦

Epitaxy of Si-Ge heterostructures by Si MBE

✍ Scribed by J.-M. Baribeau; D.C. Houghton; D.J. Lockwood; M.W.C. Dharma-Wardana; G.C. Aers

Publisher: Elsevier Science
Year: 1989
Tongue: English
Weight: 345 KB
Volume: 95
Category: Article
ISSN: 0022-0248
DOI: 10.1016/0022-0248(89)90439-9

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

Intermixing-controlled epitaxy for Si–Ge

Intermixing-controlled epitaxy for Si–Ge heterostructure devices

✍ M. Miyao; K. Nakagawa; N. Sugii; Y. Kimura; S. Yamaguchi 📂 Article 📅 1999 🏛 Elsevier Science 🌐 English ⚖ 104 KB

Direct-gap Ge/GeSn/Si and GeSn/Ge/Si het

Direct-gap Ge/GeSn/Si and GeSn/Ge/Si heterostructures

✍ Richard A. Soref; Lionel Friedman 📂 Article 📅 1993 🏛 Elsevier Science 🌐 English ⚖ 159 KB

A theoretical proposal is given for creating direct-gap semiconductor layers in silicon-based Group IV heterostructures. Based upon recent bandstructure calculations for pseudomorphic \(\mathrm{Ge} / \mathrm{GeSi}\) and \(\mathrm{GeSi} / \mathrm{Ge}\), we predict a strain-induced \(\Gamma^{\mathrm{C

Band discontinuities of Si/Ge heterostru

Band discontinuities of Si/Ge heterostructures

✍ Lifeng Liu; G.S. Lee; A.H. Marshak 📂 Article 📅 1994 🏛 Elsevier Science 🌐 English ⚖ 404 KB

The electrical assessment of p-isotype S

The electrical assessment of p-isotype Si/SiGe/Si heterostructures grown by MBE

✍ J.C. Brighten; R.A. Kubiak; P.J. Phillips; T.E. Whall; E.H.C. Parker; I.D. Hawki 📂 Article 📅 1992 🏛 Elsevier Science 🌐 English ⚖ 236 KB

Low temperature formation of Si/silicide

Low temperature formation of Si/silicide/Si double heterostructures by self-aligned MBE growth

✍ T. Ohsima; N. Nakamura; K. Nakagawa; M. Miyao 📂 Article 📅 1990 🏛 Elsevier Science 🌐 English ⚖ 561 KB

Boron-doped Si/Ge superlattices and hete

Boron-doped Si/Ge superlattices and heterostructures

✍ J.F. Nützel; F. Meier; E. Friess; G. Abstreiter 📂 Article 📅 1992 🏛 Elsevier Science 🌐 English ⚖ 279 KB