Direct-gap Ge/GeSn/Si and GeSn/Ge/Si het
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Richard A. Soref; Lionel Friedman
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Article
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1993
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Elsevier Science
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English
⚖ 159 KB
A theoretical proposal is given for creating direct-gap semiconductor layers in silicon-based Group IV heterostructures. Based upon recent bandstructure calculations for pseudomorphic \(\mathrm{Ge} / \mathrm{GeSi}\) and \(\mathrm{GeSi} / \mathrm{Ge}\), we predict a strain-induced \(\Gamma^{\mathrm{C