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Boron-doped Si/Ge superlattices and heterostructures

✍ Scribed by J.F. Nützel; F. Meier; E. Friess; G. Abstreiter


Publisher
Elsevier Science
Year
1992
Tongue
English
Weight
279 KB
Volume
222
Category
Article
ISSN
0040-6090

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Direct-gap Ge/GeSn/Si and GeSn/Ge/Si het
✍ Richard A. Soref; Lionel Friedman 📂 Article 📅 1993 🏛 Elsevier Science 🌐 English ⚖ 159 KB

A theoretical proposal is given for creating direct-gap semiconductor layers in silicon-based Group IV heterostructures. Based upon recent bandstructure calculations for pseudomorphic \(\mathrm{Ge} / \mathrm{GeSi}\) and \(\mathrm{GeSi} / \mathrm{Ge}\), we predict a strain-induced \(\Gamma^{\mathrm{C