𝔖 Bobbio Scriptorium
✦   LIBER   ✦

Boron doping of SiGe base of heterobipolar transistors

✍ Scribed by H. Kibbel; E. Kasper; P. Narozny; H.-U. Schreiber


Publisher
Elsevier Science
Year
1990
Tongue
English
Weight
436 KB
Volume
184
Category
Article
ISSN
0040-6090

No coin nor oath required. For personal study only.


📜 SIMILAR VOLUMES


Effects of Ge concentration, boron co-do
✍ M. Konstantaki; G. Tamiolakis; A. Argyris; A. Othonos; A. Ikiades 📂 Article 📅 2004 🏛 John Wiley and Sons 🌐 English ⚖ 119 KB

In this paper, we compare photosensitivity, refractiveindex modulation depth, spectral bandwidth, and excess loss through the inscription of fiber Bragg gratings in unloaded and hydrogen-loaded fibers with low-or high-germanium concentration and boron co-doping. Gratings in hydrogenated boron co-dop