Epitaxy of BaTiO3 thin film on Si(0 0 1) using a SrTiO3 buffer layer for non-volatile memory application

✍ Scribed by G. Niu; S. Yin; G. Saint-Girons; B. Gautier; P. Lecoeur; V. Pillard; G. Hollinger; B. Vilquin

• Publisher: Elsevier Science
• Year: 2011
• Tongue: English
• Weight: 636 KB
• Volume: 88
• Category: Article
• ISSN: 0167-9317
• DOI: 10.1016/j.mee.2011.03.028

✦ Synopsis

In this study we report the epitaxial growth of BaTiO 3 films on Si(0 0 1) substrate buffered by 5 nm-thick SrTiO 3 layer using both MBE and PLD techniques. The BaTiO 3 films demonstrate single crystalline, (0 0 1)oriented texture and atomically flat surface on SrTiO 3 /Si template. The electrical characterizations of the BaTiO 3 films using MFIS structures show that samples grown by MBE with limited oxygen pressure during the growth exhibit typical dielectric behavior despite post deposition annealing process employed. A ferroelectric BaTiO 3 layer is obtained using PLD method, which permits much higher oxygen pressure. The C-V curve shows a memory window of 0.75 V which thus enable BaTiO 3 possibly being applied to the non-volatile memory application.