𝔖 Bobbio Scriptorium
✦   LIBER   ✦

Epitaxial vapor growth of gallium antimonide

✍ Scribed by Tetsuya Arizumi; Masahiro Kakehi; Ryuichi Shimokawa

Publisher
Elsevier Science
Year
1971
Tongue
English
Weight
750 KB
Volume
9
Category
Article
ISSN
0022-0248

No coin nor oath required. For personal study only.

πŸ“œ SIMILAR VOLUMES

Growth of gallium antimonide epitaxial l
Growth of gallium antimonide epitaxial layers on indium arsenide substrates
✍ Dr. L. D. Pramatarova; Dr. D. N. Tretjakov πŸ“‚ Article πŸ“… 1981 πŸ› John Wiley and Sons 🌐 English βš– 347 KB πŸ‘ 2 views

## Abstract In the present work the possibility is demonstrated of growing gallium antimonide epitaxial layers on indium arsenide substrates using the liquid phase epitaxial (LPE) method. The influence is nivestigated of the growth conditions on the morphology of the surface and interface of the e

Vapor epitaxy of gallium nitride
Vapor epitaxy of gallium nitride
✍ M Ilegems πŸ“‚ Article πŸ“… 1972 πŸ› Elsevier Science 🌐 English βš– 562 KB
Piezoemission of gallium antimonide
Piezoemission of gallium antimonide
✍ C.Benoit Γ la Guillaume; P. Lavallard πŸ“‚ Article πŸ“… 1970 πŸ› Elsevier Science 🌐 English βš– 260 KB
The epitaxial growth of gallium arsenide
The epitaxial growth of gallium arsenide using triethylarsine
✍ T Maeda; M Hata; Y Zempo; N Fukuhara; Y Matsuda; K Sawara πŸ“‚ Article πŸ“… 1989 πŸ› John Wiley and Sons 🌐 English βš– 387 KB

The thermal decomposition of triethylarsine (TEAS) has been studied. It decomposes at a lower temperature than arsine (AsH3). The decomposition proceeds via a radical process at a temperature above 700Β°C. Epitaxial growth using TEAs has been investigated. A gallium arsenide (GaAs) layer with good mo