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Epitaxial lateral overgrowth of amorphous CVD silicon films induced by ion irradiation

✍ Scribed by M. Voelskow; W. Skorupa; K. Wollschlaeger; J. Matthael; P. Knothe; K.-H. Heinig; H. Bartsch


Publisher
Elsevier Science
Year
1989
Tongue
English
Weight
346 KB
Volume
43
Category
Article
ISSN
0169-4332

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Electronic properties of ion irradiated
✍ S Bhattacharyya; D Kanjilal; A Sayeed; V Meenakshi; SV Subramanyam 📂 Article 📅 1996 🏛 Elsevier Science 🌐 English ⚖ 425 KB

## Amorphous hydrogenated carbon films were prepared by plasma assisted CVD method. Their de conductivity was studied as a function of temperature in the range of 300 K to 10 K. films were then subjected to high energy (170 MeVI ion irradiation. After irradiation a marked change was observed in th