Electronic properties of ion irradiated amorphous carbon films prepared by plasma assisted CVD method

✍ Scribed by S Bhattacharyya; D Kanjilal; A Sayeed; V Meenakshi; SV Subramanyam

• Publisher: Elsevier Science
• Year: 1996
• Tongue: English
• Weight: 425 KB
• Volume: 47
• Category: Article
• ISSN: 0042-207X
• DOI: 10.1016/s0042-207x(96)00171-6

✦ Synopsis

Amorphous hydrogenated

carbon films were prepared by plasma assisted CVD method. Their de conductivity was studied as a function of temperature in the range of 300 K to 10 K. films were then subjected to high energy (170 MeVI ion irradiation. After irradiation a marked change was observed in the conductivity and its temperature dependence.

The conductivity decreased by 2-3 orders of magnitude and a gap appeared in the electronic structure. UPS studies of the material show a decrease in the II states of the electronic density of states spectrum. A change in the Cls peak shape was observed in XPS study of the irradiated carbon film.