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Epitaxial growth of ZnO films at extremely low temperature by atomic layer deposition with interrupted flow

โœ Scribed by Ching-Shun Ku; Hsin-Yi Lee; Jheng-Ming Huang; Chih-Ming Lin


Book ID
113783469
Publisher
Elsevier Science
Year
2010
Tongue
English
Weight
710 KB
Volume
120
Category
Article
ISSN
0254-0584

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๐Ÿ“œ SIMILAR VOLUMES


Epitaxial growth of ZnO thin films on Al
โœ Rahmane, S. ;Abdallah, B. ;Soussou, A. ;Gautron, E. ;Jouan, P.-Y. ;Le Brizoual, ๐Ÿ“‚ Article ๐Ÿ“… 2010 ๐Ÿ› John Wiley and Sons ๐ŸŒ English โš– 465 KB

## Abstract Hexagonal aluminium nitride (AlN) and zinc oxide (ZnO) thin films have been deposited by DC and RF reactive magnetron sputtering at room temperature. For a first set of samples, sputtered AlN films were deposited on silicon ZnO substrate. For a second set, ZnO films were deposited on Al