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Growth of high-quality epitaxial ZnO films on (10–10) sapphire by atomic layer deposition with flow-rate interruption method

✍ Scribed by Huang, Jheng-Ming; Ku, Ching-Shun; Lee, Hsin-Yi; Lin, Chih-Ming; Chen, San-Yuan


Book ID
123449287
Publisher
Elsevier Science
Year
2013
Tongue
English
Weight
802 KB
Volume
231
Category
Article
ISSN
0257-8972

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