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Epitaxial Growth of Si by Low-energy DC-plasma Chemical Vapor Deposition

✍ Scribed by E. Mateeva; H. R. Deller; U. Kafader; C. Rosenblad; H. Von Känel; A. Dommann

Book ID
110237951
Publisher
Springer
Year
1998
Tongue
English
Weight
91 KB
Volume
17
Category
Article
ISSN
0261-8028

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## Ž . Ž . Low-temperature epitaxy LTE of crystalline silicon in the plasma-enhanced chemical vapor deposition PECVD was Ž . investigated using in situ observation of reflection high energy electron diffraction RHEED . Source gases of SiH and H 4 2 ## Ž . Ž . mixture were decomposed by radio-fr