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Epitaxial growth of relaxed germanium layers by reduced pressure chemical vapour deposition on (110) and (111) silicon substrates

✍ Scribed by Van Huy Nguyen; A. Dobbie; M. Myronov; D.J. Norris; T. Walther; D.R. Leadley

Book ID: 113937381
Publisher: Elsevier Science
Year: 2012
Tongue: English
Weight: 851 KB
Volume: 520
Category: Article
ISSN: 0040-6090
DOI: 10.1016/j.tsf.2011.10.099

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