𝔖 Bobbio Scriptorium
✦   LIBER   ✦

Epitaxial growth of high quality ZnSe on Si substrates by molecular beam epitaxy and application to dc electroluminescent cells

✍ Scribed by Mino, Naoki; Kobayashi, Masakazu; Konagai, Makoto; Takahashi, Kiyoshi

Book ID
120373982
Publisher
American Institute of Physics
Year
1985
Tongue
English
Weight
592 KB
Volume
58
Category
Article
ISSN
0021-8979

No coin nor oath required. For personal study only.

πŸ“œ SIMILAR VOLUMES

Growth of high quality of ZnSe epilayers
Growth of high quality of ZnSe epilayers on (001) vicinally oriented GaAs substrate by molecular beam epitaxy
✍ Jin-Sang Kim; Jong-Hyeng Song; Sang-Hee Suh πŸ“‚ Article πŸ“… 2000 πŸ› Elsevier Science 🌐 English βš– 247 KB

We have investigated the structural properties of ZnSe epilayers that were grown by molecular beam epitaxy on (001) GaAs substrate with different tilt angles. Two-dimensional growth mode increased with increasing tilt of (001) GaAs toward [010] direction. This was confirmed by atomic force microscop