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Molecular beam epitaxial growth and characterization of ZnSTe epilayers and ZnSTe/ZnSe superlattices on Si substrates

✍ Scribed by Y.W. Chan; H. Wang; I.K. Sou; K.S. Wong; G.K.L. Wong

Publisher
Elsevier Science
Year
1995
Tongue
English
Weight
405 KB
Volume
150
Category
Article
ISSN
0022-0248

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We have investigated the structural properties of ZnSe epilayers that were grown by molecular beam epitaxy on (001) GaAs substrate with different tilt angles. Two-dimensional growth mode increased with increasing tilt of (001) GaAs toward [010] direction. This was confirmed by atomic force microscop