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Epitaxial growth of GaN layers with double-buffer layers

✍ Scribed by Uchida, K; Nishida, K; Kondo, M; Munekata, H


Book ID
108342708
Publisher
Elsevier Science
Year
1998
Tongue
English
Weight
181 KB
Volume
189-190
Category
Article
ISSN
0022-0248

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## Abstract Thick GaN layers deposited in HVPE system on composite substrates made on sapphire substrates in Metalorganic Vapour Phase Epitaxy (MOVPE) system have been investigated. The following substrates were used: (00.1) sapphire substrates with AlN, AlN/GaN and GaN thin layers. The crystallogr