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Epitaxial Gallium Arsenide from Trimethyl Gallium and Arsine

โœ Scribed by Rai-Choudhury, P.


Book ID
126763952
Publisher
The Electrochemical Society
Year
1969
Tongue
English
Weight
340 KB
Volume
116
Category
Article
ISSN
0013-4651

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Institute of Semiconductor Physics, Siberian Branch of the Academy of Sciences of the USSR h'ovosibirsk 90, USSR ## Liquid Phase Epitaxial Growth of Undoped Gallium Arsenide from Bismuth and Gallium Melts Electrical properties of undoped GaAs layers grown from G a and Bi melts under identical con