Enhancement of the electrical properties of Al-doped ZnO films deposited on ZnO-buffered glass substrates by using an ultrathin aluminum underlayer
β Scribed by Wangwoo Lee; R. P. Dwivedi; Chanseok Hong; Hyoun Woo Kim; Namhee Cho; Chongmu Lee
- Publisher
- Springer
- Year
- 2007
- Tongue
- English
- Weight
- 191 KB
- Volume
- 43
- Category
- Article
- ISSN
- 0022-2461
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## Abstract Transparent and conductive Alβdoped ZnO (AZO) films with thickness between 0.2 and 1.1 ΞΌm were deposited by sputtering at room temperature on glass and polyethylene terephthalate (PET) substrates. All films were polycrystalline with average crystallite size increasing when the film thic
The effects of substrate temperature, T s , on the crystallinity and the electrical properties of Ga-doped ZnO films (GZO) with a thickness of 200 nm were investigated. GZO films were prepared on glass substrates at various T s in the range from 150 to 400 Β°C by ion-plating method with DC arc discha