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Enhancement of light output power in GaN-based light-emitting diodes using indium tin oxide films with nanoporous structures

✍ Scribed by Ji Hye Kang; Jae Hyoung Ryu; Hyun Kyu Kim; Hee Yun Kim; Nam Han; Mi So Lee; Young Jae Park; Periyayya Uthirakumar; Volodymyr V. Lysak; Chang-Hee Hong


Book ID
113937064
Publisher
Elsevier Science
Year
2011
Tongue
English
Weight
937 KB
Volume
520
Category
Article
ISSN
0040-6090

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## Abstract Wafer‐scale UV nanoimprint and dry etching processes were used to fabricate photonic crystal patterns on an indium tin oxide (ITO) top electrode of GaN‐based green light‐emitting diodes (LEDs). Photonic crystal patterns with pitches ranging from 600 to 900 nm were transferred to the ent