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Enhancement of efficiency of InGaN-based light emitting diodes through strain and piezoelectric field management

✍ Scribed by Pal, J.; Migliorato, M. A.; Li, C.-K.; Wu, Y.-R.; Crutchley, B. G.; Marko, I. P.; Sweeney, S. J.


Book ID
121195671
Publisher
American Institute of Physics
Year
2013
Tongue
English
Weight
938 KB
Volume
114
Category
Article
ISSN
0021-8979

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