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Enhancement of copper-sapphire adhesion induced by ion beam mixing

✍ Scribed by E. Abonneau; G. Fuchs; M. Treilleux; A. Perez

Book ID
113281091
Publisher
Elsevier Science
Year
1990
Tongue
English
Weight
794 KB
Volume
46
Category
Article
ISSN
0168-583X

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Enhancing adhesion by ion beam-induced a
Enhancing adhesion by ion beam-induced atomic mixing at the interface between copper film and polyimide substrate
✍ S. K. Koh; K. D. Pae; N. G. Stoffel; D. L. Hart πŸ“‚ Article πŸ“… 1990 πŸ› Society for Plastic Engineers 🌐 English βš– 462 KB

## Abstract Ion beam mixing was used to improve the adhesion between deposited Cu film (400 Γ…) and polyimide (PI) substrate. Ar^+^ ion with the energy levels between 180 and 200 keV, and the dose between 10^14^ to 4 Γ— 10^16^ ions/cm^2^ were used. The surface analyses were carried out by Rutherford