Low-resistance magnetic tunneling junctions consisting of Ta/NiFe/Cu/NiFe/IrMn/CoFe/Al (6.6 and 7.7 A)-oxide/CoFe/NiFe/Ta were fabricated with the plasma-oxidized insulation layer. Electrical properties and microstructure of the junctions are characterized before and after annealing the junction at
β¦ LIBER β¦
Enhanced reliability of magnetic tunnel junctions with thermal annealing
β Scribed by Kim, Kwang-Seok ;Shim, Heejea ;Cho, B. K.
- Publisher
- John Wiley and Sons
- Year
- 2004
- Tongue
- English
- Weight
- 124 KB
- Volume
- 201
- Category
- Article
- ISSN
- 0031-8965
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