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Enhanced nitrogen incorporation by pulsed laser annealing of GaN[sub x]As[sub 1âx] formed by N ion implantation

✍ Scribed by Yu, K. M.; Walukiewicz, W.; Beeman, J. W.; Scarpulla, M. A.; Dubon, O. D.; Pillai, M. R.; Aziz, M. J.

No coin nor oath required. For personal study only.

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Enhanced nitrogen incorporation by pulsed laser annealing of GaN[sub x]As[sub 1âx] formed by N ion implantation