Engineering the electronic structure of the CuPc/BPE-PTCDI interface by WO3doping of CuPc

✍ Scribed by Hein, Corinna ;Mankel, Eric ;Mayer, Thomas ;Jaegermann, Wolfram

• Book ID: 105365518
• Publisher: John Wiley and Sons
• Year: 2009
• Tongue: English
• Weight: 606 KB
• Category: Article
• ISSN: 0031-8965
• DOI: 10.1002/pssa.200925290

✦ Synopsis

Abstract

We investigate the electronic interface properties of an organic bilayer heterojunction solar cell, built of CuPc/BPE‐PTCDI as donor/acceptor system. Band alignment of this interface and interface potentials were measured using synchrotron induced photoemission spectroscopy (SXPS) on stepwise deposited BPE‐PTCDI on doped and non doped CuPc. Using non doped CuPc at thermodynamic equilibrium the bands bend at the interface in a direction that hinders dissociation of geminate pairs.

As a measure to form a band bending that supports geminate pair separation p‐doping of CuPc is tested. As dopant WO~3~ was applied being a promising material for p‐doping of CuPc due to its high ionization potential. At the doped CuPc/BPE‐PTCDI interface the internal field is actually reversed now driving holes in CuPc and electrons in BPE‐PTCDI away from the interface.