Probing defects at interfaces and interl
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A. Stesmans; V.V. Afanas’ev
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Article
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2007
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Elsevier Science
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English
⚖ 190 KB
Electron spin resonance (ESR) spectroscopy enables to assess on atomic scale the nature and structural aspects of interfaces and interlayers in semiconductor/insulator hetero structures. This has been applied to (1 0 0)/insulator entities with nm-thin amorphous layers of HfO 2 and LaAlO 3 of high di