✦ LIBER ✦

Energy transport drift-diffusion model for submicrometer GaAs MESFETs

✍ Scribed by Y. Yamada

Book ID: 108361546
Publisher: Elsevier Science
Year: 1997
Tongue: English
Weight: 751 KB
Volume: 28
Category: Article
ISSN: 0026-2692
DOI: 10.1016/s0026-2692(96)00101-2

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

Simulation of submicrometer GaAs MESFET'

Simulation of submicrometer GaAs MESFET's using a full dynamic transport model

✍ Feng, Y.-K.; Hintz, A. 📂 Article 📅 1988 🏛 IEEE 🌐 English ⚖ 967 KB

Quantum Energy-Transport and Drift-Diffu

Quantum Energy-Transport and Drift-Diffusion Models

✍ Pierre Degond; Florian Méhats; Christian Ringhofer 📂 Article 📅 2005 🏛 Springer 🌐 English ⚖ 320 KB

A diffusion model of subthreshold curren

A diffusion model of subthreshold current for GaAs MESFETs

✍ C.L. Liang; N.W. Cheung; R.N. Sato; M. Sokolich; N.A. Doudoumopoulos 📂 Article 📅 1991 🏛 Elsevier Science 🌐 English ⚖ 557 KB

Accurate modeling for submicrometer-gate

Accurate modeling for submicrometer-gate Si and GaAs MESFET's using two-dimensional particle simulation

✍ Yoshii, A.; Tomizawa, M.; Yokoyama, K. 📂 Article 📅 1983 🏛 IEEE 🌐 English ⚖ 868 KB

Discrete duality finite volume schemes f

Discrete duality finite volume schemes for two-dimensional drift-diffusion and energy-transport models

✍ C. Chainais-Hillairet 📂 Article 📅 2009 🏛 John Wiley and Sons 🌐 English ⚖ 571 KB

Drift–diffusion versus energy model for

Drift–diffusion versus energy model for millimetre-wave impatt diodes modelling

✍ C. Dalle; P. A. Rolland 📂 Article 📅 1989 🏛 John Wiley and Sons 🌐 English ⚖ 839 KB

A new P-N junction device model is presented. It consists of two numerical unidimensional macroscopic models. The first is a drift-diffusion model. The second is an energy model accounting for the carrier energy relaxation effects. Because device optimization requires systematic investigations, the