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Quantum Energy-Transport and Drift-Diffusion Models

✍ Scribed by Pierre Degond; Florian Méhats; Christian Ringhofer


Publisher
Springer
Year
2005
Tongue
English
Weight
320 KB
Volume
118
Category
Article
ISSN
0022-4715

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A new P-N junction device model is presented. It consists of two numerical unidimensional macroscopic models. The first is a drift-diffusion model. The second is an energy model accounting for the carrier energy relaxation effects. Because device optimization requires systematic investigations, the