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Simulation of submicrometer GaAs MESFET's using a full dynamic transport model

โœ Scribed by Feng, Y.-K.; Hintz, A.

Book ID
114535543
Publisher
IEEE
Year
1988
Tongue
English
Weight
967 KB
Volume
35
Category
Article
ISSN
0018-9383

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A fast wavelet based non-uniform grid generation method is presented for time domain simulation of active semiconductor devices. The proposed approach solves the active part model of the semiconductor device. This approach is used to solve the non-linear equations of semiconductors on the self-adapt