𝔖 Bobbio Scriptorium

✦ LIBER ✦

Energy loss and escape depth of hot electrons from shallow p-n junctions in silicon

✍ Scribed by Shahriary, I.; Schwank, J. R.; Allen, F. G.

Book ID: 120244573
Publisher: American Institute of Physics
Year: 1979
Tongue: English
Weight: 982 KB
Volume: 50
Category: Article
ISSN: 0021-8979
DOI: 10.1063/1.326126

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

Energy loss and escape depth of hot elec

Energy loss and escape depth of hot electrons from shallow p-n junctions in silicon.

📂 Article 📅 1980 🏛 Elsevier Science 🌐 English ⚖ 161 KB

The implanted profiles of boron, phospho

The implanted profiles of boron, phosphorus and arsenic in silicon from junction depth measurements : D. E. Davies, Solid-St. Electron.13 (1970), p. 229

📂 Article 📅 1970 🏛 Elsevier Science 🌐 English ⚖ 206 KB

Noise of hot carriers in the channel of

Noise of hot carriers in the channel of n silicon junction gate field effect transistors: J. P. Nougier, D. Sodini, M. Rolland, D. Gasquet and G. Lecoy. Solid-St. Electron.21, 133 (1978)

📂 Article 📅 1978 🏛 Elsevier Science 🌐 English ⚖ 128 KB

Investigation of the transition from tun

Investigation of the transition from tunneling to impact ionization multiplication in silicon p-n junction: Wieslaw A. Lukaszek, Aldert Van Der Zeil and Eugene R. Chenette. Solid State Electronics19, 57 (1976)

📂 Article 📅 1976 🏛 Elsevier Science 🌐 English ⚖ 130 KB