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Energetical role of modeled intergranular glassy film in Si3N4–SiO2 ceramics

✍ Scribed by M Yoshiya; I Tanaka; H Adachi


Publisher
Elsevier Science
Year
2000
Tongue
English
Weight
212 KB
Volume
48
Category
Article
ISSN
1359-6454

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Analysis of N isotope depth profiles in
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We have measured depth profiles of N isotopes by Rutherford backscattering spectrometry (RBS) and nuclear reaction analysis (NRA) before and after implantation of 100 keV N isotopes into Si 3 N 4 films on SiO 2 -glass substrates, which were prepared by using RF-magnetron-reactive-sputtering depositi