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✦   LIBER   ✦

Ellipsometry studies on the effect of etching time in porous silicon

✍ Scribed by R Prabakaran; G Raghavan; S Tripura Sundari; R Kesavamoorthy; Francis P Xavier

Book ID
104428189
Publisher
Elsevier Science
Year
2002
Tongue
English
Weight
502 KB
Volume
15
Category
Article
ISSN
1386-9477

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✦ Synopsis

The optical response of n-type porous silicon is investigated using spectroscopic ellipsometry in the energy range of 1.5 -5 eV. The close interrelationship between the microstructure and electronic states is examined on (1 0 0) oriented n-type single crystal silicon wafers anodically etched for di erent durations under illumination with a halogen lamp. Changes occurring in the pseudodielectric response upon etching are analyzed using a multilayer model within the e ective medium approximation. Sum rules are used to evaluate changes in the e ective number of electrons participating in the optical transition (N e ). The process of etching is shown to result in a substantial shift of spectral weights to the visible region.

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We have fabricated porous silicon layers (PSLs) in the anodizing solution, HF(48wt.\%): \(\mathrm{H}_{2} \mathrm{O}=1: 1\). After anodization, the PSL was etched in the same chemical solution as used for anodization and then illuminated with the \(476.5 \mathrm{~nm}\) line, with a power of \(20 \mat