The diagnostic potential of reΓected electron energy-loss microscopy (REELM) and scanning Auger microscopy (SAM) are explored with respect to two particular aspects encountered in the surface microchemical analysis of semiconductor materials : determining the kind of coverage, i.e. whether continuou
β¦ LIBER β¦
Elemental and chemical microanalysis of silicon surfaces by reflected electron energy loss microscopy and scanning Auger microscopy
β Scribed by E Paparazzo
- Publisher
- Elsevier Science
- Year
- 1995
- Tongue
- English
- Weight
- 400 KB
- Volume
- 76
- Category
- Article
- ISSN
- 0368-2048
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