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Electrophysical properties of epitaxial gallium arsenide doped with acceptor impurities

✍ Scribed by M. D. Vilisova; Yu. G. Kataev; N. A. Chernov; I. A. Bobrovnikova; I. V. Teterkina; L. G. Lavrent'eva

No coin nor oath required. For personal study only.

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