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Electrophysical properties of amorphous silicon films prepared by CVD method

โœ Scribed by T.I. Taurbaev; Kh.J. Koshumbekov; Kh.K. Mukanov; F.A. Mukashev

Book ID
119444116
Publisher
Elsevier Science
Year
1987
Tongue
English
Weight
194 KB
Volume
90
Category
Article
ISSN
0022-3093

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## Amorphous hydrogenated carbon films were prepared by plasma assisted CVD method. Their de conductivity was studied as a function of temperature in the range of 300 K to 10 K. films were then subjected to high energy (170 MeVI ion irradiation. After irradiation a marked change was observed in th