Electrophysical characteristics of HfO2gate structures formed by electron-beam evaporation

✍ Scribed by A. G. Vasil’ev; R. A. Zakharov; A. A. Orlikovskii; A. E. Rogozhin; M. S. Sonin; I. A. Khorin

• Book ID: 110214411
• Publisher: Springer
• Year: 2009
• Tongue: English
• Weight: 243 KB
• Volume: 38
• Category: Article
• ISSN: 1063-7397
• DOI: 10.1134/s1063739709050059